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Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer Journal article
Xie X.H., Zhang Z.Z., Li B.H., Wang S.P., Jiang M.M., Shan C.X., Zhao D.X., Chen H.Y., Shen D.Z.. Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer[J]. APPLIED PHYSICS LETTERS, 2013, 102(23).
Authors:  Xie X.H.;  Zhang Z.Z.;  Li B.H.;  Wang S.P.;  Jiang M.M.; et al.
Favorite | TC[WOS]:26 TC[Scopus]:26  IF:3.5/3.5 | Submit date：2019/04/08
P-type conductivity in N-doped ZnO: The role of the N Zn-V O complex Journal article
Liu L., Xu J., Wang D., Jiang M., Wang S., Li B., Zhang Z., Zhao D., Shan C.-X., Yao B., Shen D.Z.. P-type conductivity in N-doped ZnO: The role of the N Zn-V O complex[J]. PHYSICAL REVIEW LETTERS, 2012, 108(21).
Authors:  Liu L.;  Xu J.;  Wang D.;  Jiang M.;  Wang S.; et al.
Favorite | TC[WOS]:150 TC[Scopus]:165  IF:8.1/8.3 | Submit date：2019/04/08
Degenerated MgZnO films obtained by excessive zinc Journal article
Liu J.S., Shan C.X., Wang S.P., Li B.H., Zhang Z.Z., Shen D.Z.. Degenerated MgZnO films obtained by excessive zinc[J]. JOURNAL OF CRYSTAL GROWTH, 2012, 347(1), 95-98.
Authors:  Liu J.S.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang Z.Z.; et al.
Favorite | TC[WOS]:11 TC[Scopus]:11  IF:1.7/1.7 | Submit date：2019/04/08
A1. Characterization  A3. Molecular Beam Epitaxy  B2. Semiconducting Ii-vi Materials  
On the origin of intrinsic donors in ZnO Journal article
Sun F., Shan C.X., Wang S.P., Li B.H., Zhang J.Y., Zhang Z.Z., Zhao D.X., Yao B., Shen D.Z., Fan X.W.. On the origin of intrinsic donors in ZnO[J]. APPLIED SURFACE SCIENCE, 2010, 256(11), 3390-3393.
Authors:  Sun F.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang J.Y.; et al.
Favorite | TC[WOS]:22 TC[Scopus]:21  IF:6.3/5.9 | Submit date：2019/04/08
Carrier Concentration  Hall Measurement  Intrinsic Donors  Zinc Oxide  
Degenerate layer at ZnO/sapphire interface Journal article
Li L., Shan C.X., Wang S.P., Li B.H., Zhang J.Y., Yao B., Shen D.Z., Fan X.W., Lu Y.M.. Degenerate layer at ZnO/sapphire interface[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42(19).
Authors:  Li L.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang J.Y.; et al.
Favorite | TC[WOS]:6 TC[Scopus]:6  IF:3.1/3.0 | Submit date：2019/04/08
A facile route to arsenic-doped p-type ZnO films Journal article
Wang S.P., Shan C.X., Li B.H., Zhang J.Y., Yao B., Shen D.Z., Fan X.W.. A facile route to arsenic-doped p-type ZnO films[J]. JOURNAL OF CRYSTAL GROWTH, 2009, 311(14), 3577-3580.
Authors:  Wang S.P.;  Shan C.X.;  Li B.H.;  Zhang J.Y.;  Yao B.; et al.
Favorite | TC[WOS]:17 TC[Scopus]:18  IF:1.7/1.7 | Submit date：2019/04/08
A1. Diffusion  A1. Doping  A3. Molecular Beam Epitaxy  B2. Semiconducting Ii-vi Materials  
Electrical and optical properties of ZnO films grown by molecular beam epitaxy Journal article
Wang S.P., Shan C.X., Yao B., Li B.H., Zhang J.Y., Zhao D.X., Shen D.Z., Fan X.W.. Electrical and optical properties of ZnO films grown by molecular beam epitaxy[J]. APPLIED SURFACE SCIENCE, 2009, 255(9), 4913-4915.
Authors:  Wang S.P.;  Shan C.X.;  Yao B.;  Li B.H.;  Zhang J.Y.; et al.
Favorite | TC[WOS]:24 TC[Scopus]:27  IF:6.3/5.9 | Submit date：2019/04/08
Grain Boundary  Hall Mobility  Molecular Beam Epitaxy  Zinc Oxide  
Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors Conference paper
Wei Z.P., Yao B., Li Y.F., Shen D.Z., Lu Y.M., Zhang Z.Z., Li B.H., Zheng C.J., Wang X.H., Zhang J.Y., Zhao D.X., Fan X.W., Tang Z.K.. Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors[C], 2008, 3043-3046.
Authors:  Wei Z.P.;  Yao B.;  Li Y.F.;  Shen D.Z.;  Lu Y.M.; et al.
Favorite |  | Submit date：2019/04/08
N doping  P-MBE  ZnMgO/ZnO p-n junction  
Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire Conference paper
Wei Z.P., Lu Y.M., Shen D.Z., Zhang Z.Z., Yao B., Li B.H., Zhang J.Y., Zhao D.X., Fan X.W., Tang Z.K.. Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire[C], 2008, 3038-3042.
Authors:  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Zhang Z.Z.;  Yao B.; et al.
Favorite |  | Submit date：2019/04/08
Electroluminescence  LED  P-MBE  P-type ZnO  
Realization of p -type conduction in undoped MgxZn 1-xO thin films by controlling Mg content Journal article
Li Y.F., Yao B., Lu Y.M., Wei Z.P., Gai Y.Q., Zheng C.J., Zhang Z.Z., Li B.H., Shen D.Z., Fan X.W., Tang Z.K.. Realization of p -type conduction in undoped MgxZn 1-xO thin films by controlling Mg content[J]. Applied Physics Letters, 2007, 91(23).
Authors:  Li Y.F.;  Yao B.;  Lu Y.M.;  Wei Z.P.;  Gai Y.Q.; et al.
Favorite | TC[WOS]:60 TC[Scopus]:70 | Submit date：2019/04/08