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THE STATE KEY LA... [1]
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Journal article [1]
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2025 [1]
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英語English [1]
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Solid-State Elec... [1]
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Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K
Journal article
Ma, Zhizhao, Su, Hao, Lin, Yuhuan, Zhou, Shenghua, Zhou, Feichi, Liu, Xiaoguang, Lin, Longyang, Li, Yida, Chen, Kai. Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K[J]. Solid-State Electronics, 2025, 224, 109045.
Authors:
Ma, Zhizhao
;
Su, Hao
;
Lin, Yuhuan
;
Zhou, Shenghua
;
Zhou, Feichi
; et al.
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Submit date：2025/01/22
Cryogenic
Dibl
Extraction Method
Threshold Voltage
