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A -40∼125∘C 0.4μA Low Noise Bandgap Voltage Reference with 0.8mA Load Driving Capability Using Shared Feedback Resistors Journal article
Zhang, Zhaobo, Zhan, Chenchang, Wang, Lidan, Law, Man Kay. A -40∼125∘C 0.4μA Low Noise Bandgap Voltage Reference with 0.8mA Load Driving Capability Using Shared Feedback Resistors[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2022, 69(10), 4033-4037.
Authors:  Zhang, Zhaobo;  Zhan, Chenchang;  Wang, Lidan;  Law, Man Kay
Favorite | TC[WOS]:14 TC[Scopus]:17  IF:4.0/3.7 | Submit date：2022/08/05
Bandgap Reference (Bgr)  Capacitors  Codes  Low Dropout Regulator (Ldo)  Low Noise  Low Power  Low-cost Internet Of Things (Iot)  Power Supplies  Resistors  Temperature Measurement  Thermal Stability  Two Wafers  Voltage  
A 0.18-V 382-mu W Bluetooth Low-Energy Receiver Front-End With 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS Journal article
Yi, Haidong, Yu, Wei-Han, Mak, Pui-In, Yin, Jun, Martins, Rui P.. A 0.18-V 382-mu W Bluetooth Low-Energy Receiver Front-End With 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2018, 53(6), 1618-1627.
Authors:  Yi, Haidong;  Yu, Wei-Han;  Mak, Pui-In;  Yin, Jun;  Martins, Rui P.
Favorite | TC[WOS]:53 TC[Scopus]:60  IF:4.6/5.6 | Submit date：2018/10/30
Bandgap Reference (Bgr)  Bluetooth Low Energy (Ble)  Charge Pump (Cp)  Class-d Voltage-controlled Oscillator (Vco)  Cmos  Energy Harvesting  Low-noise Amplifier (Lna)  Micropower Manager (Mu Pm)  Power-gating  Receiver (Rx)  Ultra-low Power (Ulp)  Ultra-low Voltage (Ulv)  
A 0.18V 382µW Bluetooth Low-Energy (BLE) Receiver Front-End with 1.33nW Sleep Power for Energy-Harvesting Applications in 28nm CMOS Journal article
Haidong Yi, Wei-Han Yu, Pui-In Mak, Jun Yin, Rui P. Martins. A 0.18V 382µW Bluetooth Low-Energy (BLE) Receiver Front-End with 1.33nW Sleep Power for Energy-Harvesting Applications in 28nm CMOS[J]. IEEE Journal of Solid-State Circuits, 2018, 53(6), 1618 - 1627.
Authors:  Haidong Yi;  Wei-Han Yu;  Pui-In Mak;  Jun Yin;  Rui P. Martins
Favorite | TC[WOS]:53 TC[Scopus]:60  IF:4.6/5.6 | Submit date：2019/03/12
Bandgap Reference (Bgr)  Bluetooth Low Energy (Ble)  Charge Pump (Cp)  Class-d Voltage-controlled Oscillator (Vco)  Cmos  Energy Harvesting  Low-noise Amplifier (Lna)  Micropower Manager (Μpm)  Power-gating  Receiver (Rx)  Ultra-low Power (Ulp)  Ultra-low Voltage (Ulv)  
A 0.18-V 382-μ W Bluetooth Low-Energy Receiver Front-End with 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS Journal article
Haidong Yi, Wei-Han Yu, Pui-In Mak, Jun Yin, Rui P. Martins. A 0.18-V 382-μ W Bluetooth Low-Energy Receiver Front-End with 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS[J]. IEEE Journal of Solid-State Circuits, 2018, 53(6), 1618-1627.
Authors:  Haidong Yi;  Wei-Han Yu;  Pui-In Mak;  Jun Yin;  Rui P. Martins
Favorite | TC[WOS]:53 TC[Scopus]:60 | Submit date：2019/02/11
Bandgap Reference (Bgr)  Bluetooth Low Energy (Ble)  Charge Pump (Cp)  Class-d Voltage-controlled Oscillator (Vco)  Cmos  Energy Harvesting  Low-noise Amplifier (Lna)  Micropower Manager (Μpm)  Power-gating  Receiver (Rx)  Ultra-low Power (Ulp)  Ultra-low Voltage (Ulv)  
A precision CMOS voltage reference exploiting silicon bandgap narrowing effect Journal article
Wang B., Law M.K., Bermak A.. A precision CMOS voltage reference exploiting silicon bandgap narrowing effect[J]. IEEE Transactions on Electron Devices, 2015, 62(7), 2128-2135.
Authors:  Wang B.;  Law M.K.;  Bermak A.
Favorite | TC[WOS]:22 TC[Scopus]:27 | Submit date：2019/02/14
Bandgap Narrowing (Bgn)  Bipolar Junction Transistor (Bjt) Curvature Reduction  Bjt Noise  Cmos Bandgap Voltage Reference (Bgr)  Curvature Correction  Process Spread  Temperature Coefficient (Tc)