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CLUT-CIM: A Capacitance Lookup Table-Based Analog Compute-in-Memory Macro With Signed-Channel Training and Weight Updating for Nonuniform Quantization Journal article
Fu, Yuzhao, Li, Jixuan, Yu, Wei Han, Un, Ka Fai, Chan, Chi Hang, Zhu, Yan, Martins, Rui P., Mak, Pui In. CLUT-CIM: A Capacitance Lookup Table-Based Analog Compute-in-Memory Macro With Signed-Channel Training and Weight Updating for Nonuniform Quantization[J]. IEEE Transactions on Circuits and Systems I-Regular Papers, 2024, 71(11), 4996-5004.
Authors:  Fu, Yuzhao;  Li, Jixuan;  Yu, Wei Han;  Un, Ka Fai;  Chan, Chi Hang; et al.
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:5.2/4.5 | Submit date：2024/07/04
Capacitance Lookup Table (Clut)  Circuits  Common Information Model (Computing)  Compute-in-memory (Cim)  Energy Efficiency  High Energy Efficiency  In-memory Computing  Indexes  Nonuniform Quantization (Nuq)  Table Lookup  Thermometers  Weight Updating  
A 28nm 314.6TLFOPS/W Reconfigurable Floating-Point Analog Compute-In-Memory Macro with Exponent Approximation and Two-Stage Sharing TD-ADC Conference paper
He, Pengyu, Zhao, Yuanzhe, Xie, Heng, Wang, Yang, Yin, Shouyi, Li, Li, Zhu, Yan, Martins, R. P., Chan, Chi Hang, Zhang, Minglei. A 28nm 314.6TLFOPS/W Reconfigurable Floating-Point Analog Compute-In-Memory Macro with Exponent Approximation and Two-Stage Sharing TD-ADC[C]:Institute of Electrical and Electronics Engineers Inc., 2024.
Authors:  He, Pengyu;  Zhao, Yuanzhe;  Xie, Heng;  Wang, Yang;  Yin, Shouyi; et al.
Favorite | TC[WOS]:0 TC[Scopus]:2 | Submit date：2024/06/05
Power Demand  In-memory Computing  Throughput  Energy Efficiency  Hardware  Common Information Model (Computing)  Artificial Intelligence  
34.6 A 28nm 72.12TFLOPS/W Hybrid-Domain Outer-Product Based Floating-Point SRAM Computing-in-Memory Macro with Logarithm Bit-Width Residual ADC Conference paper
Yuan, Yiyang, Yang, Yiming, Wang, Xinghua, Li, Xiaoran, Ma, Cailian, Chen, Qirui, Tang, Meini, Wei, Xi, Hou, Zhixian, Zhu, Jialiang, Wu, Hao, Ren, Qirui, Xing, Guozhong, Mak, Pui In, Zhang, Feng. 34.6 A 28nm 72.12TFLOPS/W Hybrid-Domain Outer-Product Based Floating-Point SRAM Computing-in-Memory Macro with Logarithm Bit-Width Residual ADC[C]:Institute of Electrical and Electronics Engineers Inc., 2024, 576-578.
Authors:  Yuan, Yiyang;  Yang, Yiming;  Wang, Xinghua;  Li, Xiaoran;  Ma, Cailian; et al.
Favorite | TC[Scopus]:7 | Submit date：2024/05/16
Training  Random Access Memory  Throughput  Common Information Model (Computing)  System-on-chip  Solid State Circuits  Complexity Theory