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Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K Journal article
Ma, Zhizhao, Su, Hao, Lin, Yuhuan, Zhou, Shenghua, Zhou, Feichi, Liu, Xiaoguang, Lin, Longyang, Li, Yida, Chen, Kai. Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K[J]. Solid-State Electronics, 2025, 224, 109045.
Authors:  Ma, Zhizhao;  Su, Hao;  Lin, Yuhuan;  Zhou, Shenghua;  Zhou, Feichi; et al.
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:1.4/1.4 | Submit date：2025/01/22
Cryogenic  Dibl  Extraction Method  Threshold Voltage  
A 521pW, 0.016%/V Line Sensitivity Self-Biased CMOS Voltage Reference With DIBL Effect Compensation Using Adaptive VGS Control Journal article
Yu, Kai, Yang, Shangru, Li, Sizhen, Huang, Mo. A 521pW, 0.016%/V Line Sensitivity Self-Biased CMOS Voltage Reference With DIBL Effect Compensation Using Adaptive VGS Control[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2024, 71(4), 1754-1758.
Authors:  Yu, Kai;  Yang, Shangru;  Li, Sizhen;  Huang, Mo
Favorite | TC[WOS]:2 TC[Scopus]:3  IF:4.0/3.7 | Submit date：2024/05/02
Cmos Voltage Reference  Dibl Effect Compensation  Line Sensitivity  Power Supply Rejection Ratio  Self-biased  Ultra-low Power