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Low-Overhead Channel Estimation via 3D Extrapolation for TDD mmWave Massive MIMO Systems under High-Mobility Scenarios
Journal article
Zhou, Binggui, Yang, Xi, Ma, Shaodan, Gao, Feifei, Yang, Guanghua. Low-Overhead Channel Estimation via 3D Extrapolation for TDD mmWave Massive MIMO Systems under High-Mobility Scenarios[J]. IEEE Transactions on Wireless Communications, 2025.
Authors:
Zhou, Binggui
;
Yang, Xi
;
Ma, Shaodan
;
Gao, Feifei
;
Yang, Guanghua
Favorite
|
TC[Scopus]:
0
IF:
8.9
/
8.6
|
Submit date:2025/01/22
Channel Extrapolation
High-mobility Scenarios
Massive Mimo
Millimeter Wave
Three-domain
Ultrathin Niobium-Doped Indium Oxide Active Layer Enables High-Performance Phototransistors for Driving Quantum-Dot Light-Emitting Diodes
Journal article
Lin, Jianrong, Fang, Wenhui, Tan, Haixing, Zhang, Haojun, Dai, Jingfei, Liu, Ziqing, Liu, Si, Chen, Jianwen, Wu, Runfeng, Xu, Hua, Ng, Kar Wei, Xiao, Peng, Liu, Baiquan. Ultrathin Niobium-Doped Indium Oxide Active Layer Enables High-Performance Phototransistors for Driving Quantum-Dot Light-Emitting Diodes[J]. Laser and Photonics Reviews, 2024, 18(11), 2400276.
Authors:
Lin, Jianrong
;
Fang, Wenhui
;
Tan, Haixing
;
Zhang, Haojun
;
Dai, Jingfei
; et al.
Favorite
|
TC[WOS]:
0
TC[Scopus]:
0
IF:
9.8
/
11.1
|
Submit date:2024/07/04
Amqled
Broad Spectral Responsivity
High Mobility
Innbo
Phototransistor
The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors
Journal article
Liu, Bingtao, Huan, Changmeng, Cai, Yongqing, Ke, Qingqing. The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors[J]. Journal of Electronic Materials, 2024, 53(11), 7057-7064.
Authors:
Liu, Bingtao
;
Huan, Changmeng
;
Cai, Yongqing
;
Ke, Qingqing
Favorite
|
TC[WOS]:
0
TC[Scopus]:
0
IF:
2.2
/
1.9
|
Submit date:2024/10/10
Ferroelectric Negative Capacitance
Oxygen Vacancies
High-mobility Ions
Hysteresis-free
The mechanisms of high mobility of a glacial debris flow using the Pudasaini-Mergili multi-phase modeling
Journal article
Wang,Tengfei, Huang,Taosheng, Shen,Ping, Peng,Dalei, Zhang,Limin. The mechanisms of high mobility of a glacial debris flow using the Pudasaini-Mergili multi-phase modeling[J]. Engineering Geology, 2023, 322, 107186.
Authors:
Wang,Tengfei
;
Huang,Taosheng
;
Shen,Ping
;
Peng,Dalei
;
Zhang,Limin
Favorite
|
TC[WOS]:
4
TC[Scopus]:
5
IF:
6.9
/
7.6
|
Submit date:2023/08/03
Entrainment
Glacial Debris Flow
High Mobility
Initial Ice/water Content
Multi-phase Modeling
Phase Transition
A sub-6g sp32t single-chip switch with nanosecond switching speed for 5g applications in 0.25 µm gaas technology
Journal article
Tianxiang Wu, Jipeng Wei, Hongquan Liu, Shunli Ma, Yong Chen, Junyan Ren. A sub-6g sp32t single-chip switch with nanosecond switching speed for 5g applications in 0.25 µm gaas technology[J]. Electronics (Switzerland), 2021, 10(12).
Authors:
Tianxiang Wu
;
Jipeng Wei
;
Hongquan Liu
;
Shunli Ma
;
Yong Chen
; et al.
Favorite
|
TC[WOS]:
9
TC[Scopus]:
9
IF:
2.6
/
2.6
|
Submit date:2021/10/28
Gaas Process
Pseudomorphic High-electron-mobility Transistor (Phemt)
Single-pole 32-throw (Sp32t) Switch
Sub-6g
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric
Journal article
Jiang, Huaxing, Liu, Chao, Ng, Kar Wei, Tang, Chak Wah, Lau, Kei May. High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65(12), 5337-5342.
Authors:
Jiang, Huaxing
;
Liu, Chao
;
Ng, Kar Wei
;
Tang, Chak Wah
;
Lau, Kei May
Favorite
|
TC[WOS]:
24
TC[Scopus]:
28
IF:
2.9
/
2.9
|
Submit date:2019/01/17
Iii-nitride
Gate Dielectric
Leakage
Metal-oxide-semiconductor High Electron Mobility Transistors (Moshemts)
Power
Zro2
Boosting metabolite characterization using ion mobility based high-resolution MSn
Conference proceedings
Authors:
Yan, Zhixiang
;
Yan, Ru
Favorite
|
|
Submit date:2022/08/15
Metabolomics
Metabolite Characterization
Ion Mobility
High-resolution Msn