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Single-pixel dual-mode microscopy for simultaneous acquisition of magnitude and wrapped phase images Journal article
Zhao, Ya Nan, Wang, Li, Li, Han, Liu, Chao, Guan, Li, Cao, De Zhong, Liu, Hong Chao, Zhang, Su Heng. Single-pixel dual-mode microscopy for simultaneous acquisition of magnitude and wrapped phase images[J]. Optics and Laser Technology, 2025, 182.
Authors:  Zhao, Ya Nan;  Wang, Li;  Li, Han;  Liu, Chao;  Guan, Li; et al.
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:4.6/4.4 | Submit date：2025/01/22
Optical Microscopy  Single-pixel Imaging  Wrapped Phase Imaging  
Discovering Macrophage Functions Using In Vivo Optical Imaging Techniques Journal article
Li, Yue, Liu, Tzu-Ming. Discovering Macrophage Functions Using In Vivo Optical Imaging Techniques[J]. FRONTIERS IN IMMUNOLOGY, 2018, 9.
Authors:  Li, Yue;  Liu, Tzu-Ming
Adobe PDF | Favorite | TC[WOS]:21 TC[Scopus]:23  IF:5.7/6.8 | Submit date：2018/10/30
Bioluminescence Imaging  Function  Intravital Microscopy  Macrophage  Optical Imaging  Cell Tracking  
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal article
Strite S., Ruan J., Li Z., Salvador A., Chen H., Smith D.J., Choyke W.J., Morkoc H.. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1991, 9(4), 1924-1929.
Authors:  Strite S.;  Ruan J.;  Li Z.;  Salvador A.;  Chen H.; et al.
Favorite | TC[WOS]:333 TC[Scopus]:336 | Submit date：2019/04/08
Cathodoluminescence  Crystal Structure  Energy Gap  Films  Gallium Arsenides  Gallium Nitrides  Layers  Medium Temperature  Molecular Beam Epitaxy  Optical Properties  Transmission Electron Microscopy  X-ray Diffraction  
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal article
Strite S., Ruan J., Li Z., Salvador A., Chen H., Smith D.J., Choyke W.J., Morkoc H.. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1991, 9(4), 1924-1929.
Authors:  Strite S.;  Ruan J.;  Li Z.;  Salvador A.;  Chen H.; et al.
Favorite | TC[WOS]:333 TC[Scopus]:336 | Submit date：2019/04/08
Cathodoluminescence  Crystal Structure  Energy Gap  Films  Gallium Arsenides  Gallium Nitrides  Layers  Medium Temperature  Molecular Beam Epitaxy  Optical Properties  Transmission Electron Microscopy  X-ray Diffraction