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2020 [1]
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英語English [1]
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A 4μm Diameter SPAD Using Less-doped N-Well Guard Ring in Baseline 65nm CMOS
Journal article
Lu, X., Law, M. K., Jiang, Y., Zhao, X., Mak, P. I., Martins, R. P.. A 4μm Diameter SPAD Using Less-doped N-Well Guard Ring in Baseline 65nm CMOS[J]. IEEE Transactions on Electron Devices, 2020, 2223-2225.
Authors:
Lu, X.
;
Law, M. K.
;
Jiang, Y.
;
Zhao, X.
;
Mak, P. I.
; et al.
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Submit date：2022/01/25
Baseline CMOS
Premature Lateral Break-Down
Single-Photon Avalanche Diode (SPAD)
Small Pitch
