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Subranging BJT-Based CMOS Temperature Sensor With a ±0.45 °C Inaccuracy (3σ) From −50 °C to 180 °C and a Resolution-FoM of 7.2 pJ·K² at 150 °C Journal article
Bo Wang, Man-Kay Law. Subranging BJT-Based CMOS Temperature Sensor With a ±0.45 °C Inaccuracy (3σ) From −50 °C to 180 °C and a Resolution-FoM of 7.2 pJ·K² at 150 °C[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2022, 57(12), 3693-3703.
Authors:  Bo Wang;  Man-Kay Law
Favorite | TC[WOS]:10 TC[Scopus]:9  IF:4.6/5.6 | Submit date：2023/02/20
Bjt  Calibration  Double-sampling Adc  Lowleakage Switch  Subranging Readout  Temperature Sensor  
A BJT-Based CMOS Temperature Sensor Achieving an Inaccuracy of pm 0.45C(3) from °50°C to 180°C and a Resolution-FoM of 7.2pJ.K2at 150°C Conference paper
Bo Wang, Man-Kay Law, Amine Bermak. A BJT-Based CMOS Temperature Sensor Achieving an Inaccuracy of pm 0.45C(3) from °50°C to 180°C and a Resolution-FoM of 7.2pJ.K2at 150°C[C], 2022, 72-74.
Authors:  Bo Wang;  Man-Kay Law;  Amine Bermak
Favorite | TC[WOS]:10 TC[Scopus]:9 | Submit date：2022/05/17
Temperature Sensor  Subranging Readout  Low-leakage Switch  Double-sampling Adc  Calibration  Bjt  
A Time-Domain CMOS Temperature Sensor Using Gated Ring Oscillator with Linearity Optimization Conference paper
Liu, Yangyang, Lei, Yu, Law, Man Kay, Veigas, Bruno, Mak, Pui In, Martins, Rui P.. A Time-Domain CMOS Temperature Sensor Using Gated Ring Oscillator with Linearity Optimization[C], 2021.
Authors:  Liu, Yangyang;  Lei, Yu;  Law, Man Kay;  Veigas, Bruno;  Mak, Pui In; et al.
Favorite | TC[Scopus]:3 | Submit date：2021/09/20
Bjt  Cmos Temperature Sensor  Gated Ring Oscillator  Linearity Optimization  Time Domain  
Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy Journal article
Sun, Dapeng, Zhang, Tan-Tan, Law, Man-Kay, Mak, Pui-In, Martins, Rui Paulo. Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy[J]. ELECTRONICS LETTERS, 2018, 54(22), 1270-1271.
Authors:  Sun, Dapeng;  Zhang, Tan-Tan;  Law, Man-Kay;  Mak, Pui-In;  Martins, Rui Paulo
Favorite | TC[WOS]:1 TC[Scopus]:1  IF:0.7/0.9 | Submit date：2019/01/17
Resistors  Calibration  Cmos Integrated Circuits  Bipolar Transistors  Temperature Sensors  First-batch-only Calibration Parameters  Batch-to-batch Inaccuracy  Piecewise Bjt Process  Compensation Property  Base Recombination Current  Base-emitter Voltage  Cmos Temperature Sensor  Process Compensated Bjt  Intra-die Variation  Spread Compensation Property  On-chip Resistors  Inter-die Variation  Current 3  0 Mua  Voltage 1  2 v  Temperature-40 Degc To 125 Degc  Size 0  036 Mm  
Ultra-low Power/Energy Efficient High Accuracy CMOS Temperature Sensors Book chapter
出自: Selected Topics in Power, RF, and Mixed-Signal ICs:River Publishers, 2017, 页码:229-266
Authors:  Law, M. K.
Favorite |  | Submit date：2022/08/09
Ultra-low Power  Energy Efficiency  High Accuracy  Cmos Temperature Sensor  Calibration  Bjt  Mosfet  
Piecewise BJT process spread compensation exploiting base recombination current Conference paper
Sun, Dapeng, Law, Man-Kay, Wang, Bo, Mak, Pui-In, Martins, Rui P.. Piecewise BJT process spread compensation exploiting base recombination current[C], 2017, 890-893.
Authors:  Sun, Dapeng;  Law, Man-Kay;  Wang, Bo;  Mak, Pui-In;  Martins, Rui P.
Favorite | TC[WOS]:0 TC[Scopus]:2 | Submit date：2019/02/11
Bipolar Junction Transistor (Bjt)  Piecewise Process Spread Compensation  Base Recombination Current  
BJT Process Spread Compensation Utilizing Base Recombination Current in Standard CMOS Journal article
Wang B., Law M.K., Bermak A., Tang F.. BJT Process Spread Compensation Utilizing Base Recombination Current in Standard CMOS[J]. IEEE Electron Device Letters, 2015, 36(11), 1111-1113.
Authors:  Wang B.;  Law M.K.;  Bermak A.;  Tang F.
Favorite | TC[WOS]:3 TC[Scopus]:4 | Submit date：2019/02/14
Bipolar Junction Transistor (Bjt) Process Spread  Spread Compensation  Trimless Cmos Voltage Reference  
A precision CMOS voltage reference exploiting silicon bandgap narrowing effect Journal article
Wang B., Law M.K., Bermak A.. A precision CMOS voltage reference exploiting silicon bandgap narrowing effect[J]. IEEE Transactions on Electron Devices, 2015, 62(7), 2128-2135.
Authors:  Wang B.;  Law M.K.;  Bermak A.
Favorite | TC[WOS]:22 TC[Scopus]:27 | Submit date：2019/02/14
Bandgap Narrowing (Bgn)  Bipolar Junction Transistor (Bjt) Curvature Reduction  Bjt Noise  Cmos Bandgap Voltage Reference (Bgr)  Curvature Correction  Process Spread  Temperature Coefficient (Tc)